by203-12s, by203-16s, by203-20s www.vishay.com vishay semiconductors rev. 1.9, 12-sep-12 1 document number: 86002 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fast avalanche sinterglass diode mechanical data case: sod-57 sintered glass case terminals: plated axial leads, solderable per mil-std-750, method 2026 polarity: color band denotes cathode end mounting position: any weight: approx. 369 mg features ? glass passivated junction ? hermetically sealed package ? material categorization: ? for definitions of compliance please see www.vishay.com/doc?99912 applications ? fast rectification and switching avalanche sinterglass diode for tv-line output circ uits an switch mode power supply ? ? ? ? ? ? ? ? ? 949539 ordering information (example) device name ordering code taped units minimum order quantity by203-20s by203-20str 5000 per 10" tape and reel 25 000 by203-20s by203-20stap 5000 per ammopack 25 000 parts table part type differe ntiation package by203-12s v r = 1200 v; i f(av) = 250 ma sod-57 by203-16s v r = 1600 v; i f(av) = 250 ma sod-57 by203-20s v r = 2000 v; i f(av) = 250 ma sod-57 absolute maximum ratings (t amb = 25 c, unless otherwise specified) parameter test condition part symbol value unit reverse voltage = repetitive peak reverse voltage l r = 100 a by203-12s v r = v rrm 1200 v by203-16s v r = v rrm 1600 v by203-20s v r = v rrm 2000 v peak forward surge current t p = 10 ms, half sine wave i fsm 20 a average forward current i f(av) 250 ma non repetitive reverse avalanche energy i (br)r = 0.4 a e r 10 mj junction temperature range t j - 55 to + 150 c storage temperature range t stg - 55 to + 175 c maximum thermal resistance (t amb = 25 c, unless otherwise specified) parameter test condition symbol value unit junction ambient lead length l = 10 mm, t l = constant r thja 45 k/w maximum lead length r thja 100 k/w
by203-12s, by203-16s, by203-20s www.vishay.com vishay semiconductors rev. 1.9, 12-sep-12 2 document number: 86002 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (t amb = 25 ? c, unless otherwise specified) fig. 1 - junction temperature vs. reverse/repetitive peak reverse voltage fig. 2 - max. forward current vs. forward voltage fig. 3 - max. average forward current vs. ambient temperature fig. 4 - max. reverse curr ent vs. junction temperature electrical characteristics (t amb = 25 c, unless otherwise specified) parameter test condition part symbol min. typ. max. unit forward voltage i f = 200 ma, t p /t = 0.01, t p = 0.3ms v f --2.4v reverse current v r = 700 v by203-12s i r --2a v r = 1000 v by203-16s i r --2a v r = 1200 v by203-20s i r --2a breakdown voltage l r = 100 a, t p /t = 0.01, t p = 0.3 ms by203-12s v (br) 1200 - - v by203-16s v (br) 1600 - - v by203-20s v (br) 2000 - - v reverse recovery time i f = 0.5 a, i r = 1 a, i r = 0.25 a t rr - - 300 ns 0 40 80 120 160 200 240 0 400 800 1200 1600 v r , v rrm - rev./rep. peak rev. voltage (v) 949080 t j - junction temperature (c) v rrm v r by203/20 by203/16 by203/12 i f - forward current (a) 0.001 0.01 0.1 1 10 012345.0 v f - forward voltage (v) 16397 t j = 25 c t j = 175 c 16398 i fav - average forward current (a) 0 30 60 90 120 150 t amb - ambient temperature (c) 0.30 0.25 0.20 0.15 0.10 0.05 0 v r = v rrm half s inewave r thja = 100 k/w pcb: d = 25 mm r thja = 45 k/w i = 10 mm 1 10 100 1000 25 50 75 100 125 150 t j - junction temperature (c) 16399 i r - rever s e current (a) v r = v rrm
by203-12s, by203-16s, by203-20s www.vishay.com vishay semiconductors rev. 1.9, 12-sep-12 3 document number: 86002 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 5 - max. reverse power dissipation vs. junction temperature fig. 6 - diode capacitance vs. reverse voltage package dimensions in millimeters (inches): sod-57 0 100 200 300 400 500 25 50 75 100 125 150 t j - junction temperature (c) 16400 p r - rever s e power di ss ipation (mw) p r -limit at 100 % v r p r -limit at 80 % v r v r = v rrm 0 2 4 8 12 6 10 14 16 18 0.1 1 10 100 v r - rever s e voltage (v) 16401 c d - diode capacitance (pf) f = 1 mhz 20543 3.6 (0.142) max. 26 (1.024) min. 4 (0.157) max. 26 (1.024) min. 0.82 (0.032) max.
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